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Epitaxial growth

We have various types of growth equipment such as Metal organic vapor phase epitaxy (MOCVD) and molecular beam epitaxy (MBE). We have the ability to grow GaAs, InP, GaN and a series of III-V semiconductor materials, with GaAs wafers of three inches and six inches and blue-green GaN wafers of two inches.

 Everbright
 Everbright

FAB Wafer process

Micro and nano graphic processing process, with UV contact lithography, step lithography, projection lithography, holographic exposure equipment, etc., graphic processing limit line width of 10 nm level. Etching process, including wet etching cleaning and dry etching platform, can carry out etching of InP, GaAs, GaN and other compound semiconductors, etching depth > 8 um, sidewall angle > 88°. Thin film preparation process with multiple PECVD (plasma enhanced chemical vapor deposition spin), LPCVD (low pressure chemical vapor deposition), ALD (atomic layer deposition).

Cavity surface passivation treatment equipment and technology

The cavity surface coating process improves the performance of the laser chip to obtain a higher brightness chip on the one hand, and increases the reliability of the chip to obtain a longer life of the laser chip on the other hand. Possess high vacuum dissociation cavity surface passivation technology and accurate control technology of reflectivity of the enhancement film. The BAR strip is transferred to the passivation chamber for vapor deposition of passivation material, which forms a dense passivation layer on the semiconductor cavity surface.

案例展示
 Everbright

High brightness combined beam And fiber coupling

The cavity surface coating process improves the performance of the laser chip to obtain a higher brightness chip on the one hand, and increases the reliability of the chip to obtain a longer life of the laser chip on the other hand. Possess high vacuum dissociation cavity surface passivation technology and accurate control technology of reflectivity of the enhancement film. The BAR strip is transferred to the passivation chamber for vapor deposition of passivation material, which forms a dense passivation layer on the semiconductor cavity surface.

Epitaxial growth

We have various types of growth equipment such as Metal organic vapor phase epitaxy (MOCVD) and molecular beam epitaxy (MBE). We have the ability to grow GaAs, InP, GaN and a series of III-V semiconductor materials, with GaAs wafers of three inches and six inches and blue-green GaN wafers of two inches.

 Everbright
 Everbright

FAB Wafer process

Micro and nano graphic processing process, with UV contact lithography, step lithography, projection lithography, holographic exposure equipment, etc., graphic processing limit line width of 10 nm level. Etching process, including wet etching cleaning and dry etching platform, can carry out etching of InP, GaAs, GaN and other compound semiconductors, etching depth > 8 um, sidewall angle > 88°. Thin film preparation process with multiple PECVD (plasma enhanced chemical vapor deposition spin), LPCVD (low pressure chemical vapor deposition), ALD (atomic layer deposition).

Cavity surface passivation treatment equipment and technology

The cavity surface coating process improves the performance of the laser chip to obtain a higher brightness chip on the one hand, and increases the reliability of the chip to obtain a longer life of the laser chip on the other hand. Possess high vacuum dissociation cavity surface passivation technology and accurate control technology of reflectivity of the enhancement film. The BAR strip is transferred to the passivation chamber for vapor deposition of passivation material, which forms a dense passivation layer on the semiconductor cavity surface.

案例展示
 Everbright

High brightness combined beam And fiber coupling

The cavity surface coating process improves the performance of the laser chip to obtain a higher brightness chip on the one hand, and increases the reliability of the chip to obtain a longer life of the laser chip on the other hand. Possess high vacuum dissociation cavity surface passivation technology and accurate control technology of reflectivity of the enhancement film. The BAR strip is transferred to the passivation chamber for vapor deposition of passivation material, which forms a dense passivation layer on the semiconductor cavity surface.

 Everbright

Address: No.56,Lijiang Road,SND,Suzhou,Jiangsu Province,P.R.China
Mailbox:
sales@everbrightphotonics.com
Website:www.everbrightphotonics.com
Phone:0512-66896988

Fax:0512-66806323

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 Everbright

Address: No.56,Lijiang Road,SND,Suzhou,Jiangsu 

Province,P.R.China
Mailbox:
sales@everbrightphotonics.com
Website:www.everbrightphotonics.com
Phone:0512-66896988

Fax:0512-66806323

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Changguang Huaxin Optoelectronics Technology Co.

苏ICP备17060326号-1

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