Epitaxial growth
We have various types of growth equipment such as Metal organic vapor phase epitaxy (MOCVD) and molecular beam epitaxy (MBE). We have the ability to grow GaAs, InP, GaN and a series of III-V semiconductor materials, with GaAs wafers of three inches and six inches and blue-green GaN wafers of two inches.
FAB Wafer process
Micro and nano graphic processing process, with UV contact lithography, step lithography, projection lithography, holographic exposure equipment, etc., graphic processing limit line width of 10 nm level. Etching process, including wet etching cleaning and dry etching platform, can carry out etching of InP, GaAs, GaN and other compound semiconductors, etching depth > 8 um, sidewall angle > 88°. Thin film preparation process with multiple PECVD (plasma enhanced chemical vapor deposition spin), LPCVD (low pressure chemical vapor deposition), ALD (atomic layer deposition).
Cavity surface passivation treatment equipment and technology
The cavity surface coating process improves the performance of the laser chip to obtain a higher brightness chip on the one hand, and increases the reliability of the chip to obtain a longer life of the laser chip on the other hand. Possess high vacuum dissociation cavity surface passivation technology and accurate control technology of reflectivity of the enhancement film. The BAR strip is transferred to the passivation chamber for vapor deposition of passivation material, which forms a dense passivation layer on the semiconductor cavity surface.
High brightness combined beam And fiber coupling
The cavity surface coating process improves the performance of the laser chip to obtain a higher brightness chip on the one hand, and increases the reliability of the chip to obtain a longer life of the laser chip on the other hand. Possess high vacuum dissociation cavity surface passivation technology and accurate control technology of reflectivity of the enhancement film. The BAR strip is transferred to the passivation chamber for vapor deposition of passivation material, which forms a dense passivation layer on the semiconductor cavity surface.
Epitaxial growth
We have various types of growth equipment such as Metal organic vapor phase epitaxy (MOCVD) and molecular beam epitaxy (MBE). We have the ability to grow GaAs, InP, GaN and a series of III-V semiconductor materials, with GaAs wafers of three inches and six inches and blue-green GaN wafers of two inches.
FAB Wafer process
Micro and nano graphic processing process, with UV contact lithography, step lithography, projection lithography, holographic exposure equipment, etc., graphic processing limit line width of 10 nm level. Etching process, including wet etching cleaning and dry etching platform, can carry out etching of InP, GaAs, GaN and other compound semiconductors, etching depth > 8 um, sidewall angle > 88°. Thin film preparation process with multiple PECVD (plasma enhanced chemical vapor deposition spin), LPCVD (low pressure chemical vapor deposition), ALD (atomic layer deposition).
Cavity surface passivation treatment equipment and technology
The cavity surface coating process improves the performance of the laser chip to obtain a higher brightness chip on the one hand, and increases the reliability of the chip to obtain a longer life of the laser chip on the other hand. Possess high vacuum dissociation cavity surface passivation technology and accurate control technology of reflectivity of the enhancement film. The BAR strip is transferred to the passivation chamber for vapor deposition of passivation material, which forms a dense passivation layer on the semiconductor cavity surface.
High brightness combined beam And fiber coupling
The cavity surface coating process improves the performance of the laser chip to obtain a higher brightness chip on the one hand, and increases the reliability of the chip to obtain a longer life of the laser chip on the other hand. Possess high vacuum dissociation cavity surface passivation technology and accurate control technology of reflectivity of the enhancement film. The BAR strip is transferred to the passivation chamber for vapor deposition of passivation material, which forms a dense passivation layer on the semiconductor cavity surface.
Address: No.56,Lijiang Road,SND,Suzhou,Jiangsu Province,P.R.China
Mailbox:sales@everbrightphotonics.com
Website:www.everbrightphotonics.com
Phone:0512-66896988
Fax:0512-66806323
Message Board
Address: No.56,Lijiang Road,SND,Suzhou,Jiangsu
Province,P.R.China
Mailbox:sales@everbrightphotonics.com
Website:www.everbrightphotonics.com
Phone:0512-66896988
Fax:0512-66806323
Copyright © 2022 Suzhou Everbright Photonics Co., Ltd All rights reserved 苏ICP备17060326号-1 SEO
Changguang Huaxin Optoelectronics Technology Co.
Powered by 300.cn