Core Technology

Epitaxial Growth Technology

Epitaxial growth refers to the method of extending and growing a single crystal layer in a certain crystallographic direction on an existing crystal with a specific crystal orientation (commonly called the substrate). This single crystal layer is called the epitaxial layer. Epitaxial growth can precisely control the composition, thickness, interface, doping, and uniformity of the epitaxial layer. It is the first step in the fabrication of semiconductor lasers. The material structure and quality of the epitaxial growth directly determine the wavelength, power, lifespan, and reliability of the semiconductor laser chip, making it one of the core technologies in semiconductor laser manufacturing.

Epitaxial Growth Technology

FAB Wafer Process

FAB wafer processing is a key process for manufacturing semiconductor lasers or other optoelectronic device epitaxial wafers into laser chips. It uses photolithography and etching technologies to create micron- and nanometer-scale patterns on the epitaxial structure, defining the lateral structure of semiconductor lasers and other optoelectronic devices, constructing the complete resonant cavity of the semiconductor laser and the functional structures of other optoelectronic devices. Then, processes such as dielectric film and metal film deposition are used to prepare the current injection electrodes of semiconductor lasers and other optoelectronic devices, completing the fabrication of semiconductor laser chips and other optoelectronic chips.

FAB Wafer Process

Cavity Surface Cleavage Passivation Technology

Regarding cavity surface cleavage and passivation treatment, an ultra-high vacuum (<10-10 torr) cavity surface cleavage passivation process is used, combined with a new chip structure and process without absorption windows, improving the chip's power resistance to cavity surface optical catastrophic damage.

Cavity Surface Cleavage Passivation Technology

High-brightness beam combining and fiber coupling

To address the challenges of low spectral quality, poor beam quality, and low spectral quality in high-power semiconductor lasers, micro-optical devices and compact design are used to reduce the size and volume of the laser. Hybrid spectral synthesis technology combining volume gratings and surface gratings is employed to increase output power by hundreds of times while ensuring high output beam quality. Surface grating wavelength locking technology is used to reduce center wavelength drift and improve spectral quality. High-efficiency fiber coupling technology enables flexible laser transmission and enhances system reliability. Through innovative structural design and the development of breakthrough wavelength locking and spectral synthesis technologies, a high-power, high-brightness, and high-spectral-quality fiber-coupled module is developed.

High-brightness beam combining and fiber coupling