Changguang Huaxin's Four Major Technological Achievements of 2024

12/30

2024

With the continuous penetration of lasers in industries such as industrial and communication fields, higher requirements are put forward for upstream core chips. Changguang Huaxin responds to market demands by continuously optimizing processes and innovating technologies, effectively improving key indicators such as power, efficiency, and rate of semiconductor laser chips, achieving significant results in both EEL and VCSEL chips. The related achievements have been published in influential international journals:

01 | EEL Multi-junction single-bar chip power exceeds 132W

Breakthrough progress has been made in the design and development technology of ultra-high power single-bar chip structures. The developed dual-junction single-bar chip achieves a continuous wave power of over 132W at room temperature (chip stripe width 500μm) with an operating efficiency of 62%, which is the highest single-bar chip power level reported to date, opening a new era of hundred-watt single-bar chips!

This research result was published in the internationally renowned SCI journal "photonics."

02 | EEL 780nm wide-stripe DFB laser power breaks through 10W

Breakthroughs have been made in multiple difficult areas such as grating design and material growth for high-power and narrow spectral width lasers. The developed 780nm wide-stripe distributed feedback (DFB) laser achieves continuous output power exceeding 10W at room temperature. It set the highest record for 780nm band DFB lasers while maintaining good wavelength locking characteristics over a wide current and temperature range.

This research result was published in the authoritative photonics journal "IEEE Photonics Journal."

03 | VCSEL Multi-junction VCSEL electro-optical efficiency reaches 74%

Overcoming the low-loss multi-junction VCSEL structure, the efficiency of surface-emitting chips has jumped from 61% twenty years ago to 74%, breaking the nearly 20-year stagnation in VCSEL efficiency development and changing the inherent perception that VCSEL efficiency cannot surpass edge-emitting lasers!

This research result was published in Light: Science & Applications, one of the top three international optics journals.

04 | VCSEL Single-mode VCSEL power efficiency refreshes world record

A mode analysis model for multi-junction VCSELs was constructed, solving the problem of single-mode power difficulty in exceeding about 10mW. Under DC drive, a single fundamental transverse mode laser output of 20.2mW was achieved, with a power conversion efficiency of 42%, and divergence angles of 9.8° (1/e2) and 5.1° (FWHM). This is the highest single-mode power for a single VCSEL to date, with a power value nearly twice the existing single-mode power record.

This research result was published in the leading international optics journal Photonics Research.

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