Everbright Shines at SPIE Photonics West 2026 — Forging a New Global Chapter with Light as the Blade!

 

On January 20 (U.S. time), SPIE Photonics West 2026 officially opened at the Moscone Convention Center in San Francisco. Everbright made a strong appearance at Booth #1931, showcasing its latest R&D achievements and a full-spectrum product portfolio.

 

Full product portfolio on display, showcasing the solid strength of Everbright’s IDM platform

 

Centered on core diode laser chip technologies, Everbright presented a comprehensive lineup across five major product categories: high-power diode laser chips, LiDAR & 3D sensing chips, high-speed communication chips and devices, laser pump sources and arrays, and direct diode lasers. This full-spectrum display spans multiple product series, covering the entire vertically integrated value chain—from core chips to system-level applications.

 

 

The exhibition highlights included 65 W high-power single-emitter diode chips, 2D addressable VCSEL chips, 200 mW CW DFB communication chips, and 200G PAM4 EML communication chips, fully demonstrating Everbright’s R&D depth and industrialization capabilities under its IDM model.

 

In-depth sharing of cutting-edge achievements, engaging in dialogue with global photonics leaders

 

The concurrent LASE and OPTO technical conferences held alongside the exhibition serve as premier global platforms for cutting-edge photonics research and exchange. Everbright actively participated, presenting multiple latest research achievements and innovative technologies, including:

 

 

Dr. Jun Wang, CTO and Executive Vice President of Everbright (with Dr. Yao Xiao, R&D Director and Assistant to the CTO, presenting on his behalf), was invited to deliver a keynote presentation titled “Multi-Junction VCSEL Technology to Boost Power Conversion Efficiency” at the LASE – Optical Power Delivery II conference.

 

The talk highlighted Everbright’s breakthrough advances in vertical-cavity surface-emitting lasers (VCSELs). By introducing tunnel junctions to extend longitudinal gain and combining surface microstructures to suppress higher-order transverse modes, Everbright effectively addressed the long-standing bottlenecks between power conversion efficiency (PCE) and single-mode output power in VCSELs. Experimental results demonstrated that a 15-junction VCSEL achieved a PCE exceeding 74% at room temperature, establishing a solid device foundation for green photonics applications such as 3D sensing, optical interconnects, and LiDAR, and showcasing the significant potential of multi-junction VCSELs for efficiency enhancement.

 

 

Dr. Hao Yu, Director of Optical Technology R&D at Everbright, delivered an invited technical presentation titled “Kilowatt-Class High-Brightness Blue Diode Laser Using Actively Controlled Dense Wavelength Beam Combining Technology for Material Processing” at the LASE – High Power Diode Laser Technology XXIV conference.

The presentation focused on Everbright’s proprietary actively controlled dense wavelength beam combining (DWBC) technology and the resulting kilowatt-class high-brightness blue diode laser developed based on this approach. Key highlights include:

• Exceptional beam quality: Better than 5 mm·mrad, equivalent to the beam quality of a 100 μm / 0.1 NA fiber, achieving brightness levels that are difficult for conventional blue diode lasers to attain.
• High-efficiency material processing: Well suited for processing highly reflective metals, including copper welding and metal 3D printing, significantly improving processing efficiency. Live demonstrations showcased drilling and welding of 1 mm copper plates without shielding gas, highlighting excellent process robustness and adaptability.
• Scalable power roadmap: By coupling the laser into a 105 μm / 0.22 NA fiber and leveraging fiber beam combining, future systems are expected to deliver over 6 kW output from a 200 μm / 0.22 NA fiber, meeting the demands of higher-power industrial applications.

This achievement underscores Everbright’s independent innovation capability in high-power blue diode laser technology and provides an efficient, reliable, and domestically developed solution for processing highly reflective metals, with strong potential to drive process upgrades, cost reduction, and efficiency gains across related industries.

 

 

Dr. Shaoyang Tan, Project Research Scientist at Everbright, presented a technical paper titled “High-Efficiency and Wavelength-Stabilized 78X–80X nm Laser Diodes” at the LASE – High-Power Diode Laser Technology XXIV conference.

The presentation highlighted the team’s latest breakthroughs in high-power single-emitter diode chips. Through epitaxial structure optimization, Everbright achieved efficiency exceeding 65% at an output power of 12 W for 780–808 nm laser diodes. By further integrating built-in grating-based wavelength locking technology, the devices maintained a narrow spectral linewidth of approximately 0.3 nm even at output powers above 14 W. These results have been validated through long-term lifetime testing, fully demonstrating the high efficiency and reliability of Everbright’s high-power diode laser chips and providing a stable, advanced chip solution for high-power industrial and sensing applications.

 

 

Dr. Yao Xiao, R&D Director and Assistant to the CTO at Everbright, delivered a technical presentation titled “High-Performance Common-Anode Multi-Junction VCSEL Arrays for LiDAR Applications” at the OPTO – Vertical-Cavity Surface-Emitting Lasers XXX conference. The talk systematically shared Everbright’s latest research and product developments in common-anode multi-junction VCSELs. Key results include:

• 8-Junction (8J) VCSEL Arrays: Peak output power >300 W, beam divergence <16°, and power conversion efficiency (PCE) >33%; across a temperature range of 25 °C to 125 °C, output power degradation remains <13%, demonstrating excellent thermal stability.
• 12-Junction (12J) VCSEL Arrays: Achieved 1,100 W output under no thermal rollover conditions, with single-aperture power density up to 24,000 W/mm² and array-level power density >7,500 W/mm²; high-temperature accelerated lifetime (HTOL) tests at 5 ns pulse width and 125 °C junction temperature exceeded 10,000 hours of cumulative operation, validating long-term reliability.
• Addressable 2D VCSEL Arrays: Single-channel output >100 W, with array sizes up to 16×32 channels, enabling high-density spatial control.

This research overcomes multiple bottlenecks in high power, high efficiency, and thermal stability, while providing a scalable, production-ready solution for LiDAR applications, offering valuable reference and engineering pathways for the next generation of LiDAR light sources and systems.

 

 

Dr. Yudan Gou, Associate Researcher at Sichuan University (presented on behalf by Dr. Shaoyang Tan, Project Research Scientist at Everbright), delivered a presentation titled “GaAs- and InP-Based Multijunction 1064 nm Laser Power Converters” at the OPTO – Physics, Simulation, and Photonic Engineering of Photovoltaic Devices XV conference.

The talk shared the latest progress in laser power converters (LPCs) jointly developed by Sichuan University and Everbright. For 1064 nm laser energy transmission applications, the team designed and fabricated two multijunction LPC schemes:

• InP-based design: Grown on InP substrates with lattice-matched high-quality InGaAsP absorption layers, ensuring excellent optoelectronic performance.
• Large-area GaAs-based design: Constructed with lattice-mismatched InGaAs absorption layers on large GaAs substrates, which maintains good performance while significantly improving cost-effectiveness and scalability for mass production.

This collaborative research balances high performance with industrial feasibility, offering a new pathway for the application and commercialization of laser energy transmission technology.

 

These achievements demonstrate Everbright’s sustained investment in cutting-edge fundamental research and industrial translation, resonating in step with the world’s leading research institutions and guiding the direction of industry development.

 

The booth attracted a constant flow of visitors, reflecting Everbright’s growing international influence

 

 

During the exhibition, Everbright’s Booth #1931 attracted a steady stream of professional visitors, potential clients, and industry partners from around the world. Leveraging a comprehensive product portfolio, leading performance specifications, and end-to-end solutions from chips to systems, the booth became a lively hub for consultations and technical exchanges. The Everbright team engaged visitors in in-depth discussions on product performance, technical details, application solutions, and collaboration opportunities.

This participation not only served as a showcase for the company’s innovative achievements but also marked a significant step forward in strengthening international customer connections and accelerating expansion into high-end overseas markets.

 

From record-breaking hundred-watt single-emitter chips, to VCSELs surpassing theoretical limits, and high-speed optical communication chips driving data center evolution, Everbright continues to deepen its expertise in core technologies. Leveraging extensive R&D experience and a leading product portfolio, the company is steadily expanding into overseas markets, forging a new global chapter with light as its cutting edge!